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dc.contributor.authorManhabosco, Taíse Matte-
dc.contributor.authorAloni, Shaul-
dc.contributor.authorKuykendall, Tevye R.-
dc.contributor.authorManhabosco, Sara Matte-
dc.contributor.authorBatista, Ana Bárbara-
dc.contributor.authorSoares, Jaqueline dos Santos-
dc.contributor.authorBarboza, Ana Paula Moreira-
dc.contributor.authorOliveira, Alan Barros de-
dc.contributor.authorBatista, Ronaldo Junio Campos-
dc.contributor.authorUrban, Jeffrey J.-
dc.identifier.citationMANHABOSCO, T. M. et al. Electrochemical atomic layer epitaxy deposition of ultrathin SnTe films. Recent Progress in Materials, v. 1, n. 4, out. 2019. Disponível em: <>. Acesso em: 03 jul. 2020.pt_BR
dc.description.abstractTin telluride (SnTe) ultrathin films were deposited electrochemically on polycrystalline and monocrystalline gold substrates using the electrochemical atomic layer epitaxy (ECALE) method. The electrochemical behaviors of Sn and Te were studied systematically by means of cyclic voltammetry. Cyclic voltammetry curves for Sn displayed a broad peak in the region between -0.15 V and -0.35 V, which was related to the under-potential deposition (UPD), while the curves for Te displayed a peak at 0.3 V for Te UPD. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM) were employed for the characterization of the ultrathin SnTe films. XRD and Raman spectroscopy confirmed the deposition of a single SnTe phase, while SEM revealed that the deposits were composed of nanocrystallites.pt_BR
dc.subjectUnder-potential depositionpt_BR
dc.titleElectrochemical atomic layer epitaxy deposition of ultrathin SnTe films.pt_BR
dc.typeArtigo publicado em periodicopt_BR
dc.rights.licenseThis is an open access article distributed under the conditions of the Creative Commons by Attribution License, which permits unrestricted use, distribution, and reproduction in any medium or format, provided the original work is correctly cited. Fonte: o próprio artigo.pt_BR
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